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White Light Luminescence from Nano-ZnS Doped Porous Silicon

Published online by Cambridge University Press:  15 March 2011

K. W. Cheah ,
Ling Xu  and
Xinfan Huang
K. W. Cheah*
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong
Ling Xu
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong State key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, Nanjing, P.R.China
Xinfan Huang
Affiliation:
State key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, Nanjing, P.R.China
*
#to whom all correspondence should be addressed to
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Extract

Nano-ZnS was deposited into porous silicon. By varying the concentration of Zn2+ ion solution during nano-ZnS formation, the amount of nano-ZnS in porous silicon host can be controlled. The doped porous silicon exhibited a gradual shift in its photoluminescence peak from red to blue as a function of the nano-ZnS coverage. At an optimum doping, white light photoluminescence was obtained. A study in the luminescence lifetime showed that the radiative recombination at the blue end of the visible spectrum was due to nano-ZnS, whereas, luminescence emission at the red end of the visible spectrum came from porous silicon. The latter luminescence was due to in part tunneling of excited electrons from nanoZnS into porous silicon and in part direct excitation of porous silicon layer. Time-resolved photoluminescence also showed that radiative recombination was effectively dominated by the nano-ZnS. Photoluminescence excitation result revealed the presence of two excitation levels; one belonged to nano-ZnS at near uv region, and another at about 520 nm from the surface states of porous silicon and nano-ZnS. The doping of nano-ZnS into porous silicon demonstrates that luminescence color tuning is possible when an appropriate functional material is introduced into porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A8.3
Copyright
Copyright © Materials Research Society 2002

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