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Fluorocarbon Films from Plasma Polymerization of Hexafluoropropylene and Hydrogen

Published online by Cambridge University Press:  15 February 2011

T. W. Mountsier  and
D. Kumar
T. W. Mountsier
Affiliation:
Novellus Systems, Inc., 3970 N. First Street, San Jose, CA 95134
D. Kumar
Affiliation:
Novellus Systems, Inc., 3970 N. First Street, San Jose, CA 95134
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Abstract

Fluorocarbon polymers exhibit excellent dielectric properties; however, their limited thermal and mechanical stability render them unsuitable for most interlevel dielectric applications. In this work we explore the plasma assisted deposition of fluorocarbon films from hexafluoropropylene (C3F6) and hydrogen in order to understand how the mechanical and thermal properties might be improved. Plasma activation and ion bombardment promote the formation of a crosslinked, amorphous film structure. Several process parameters were examined including temperature and rf driving frequency. The results demonstrate that crosslinked fluorocarbon polymers with enhanced mechanical strength can be produced from C3F6 in a plasma environment. Most of the films studied here had dielectric constants in the range of 2 to 2.5. Thermal stability (to 400 °C), however, was not achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 41
Copyright
Copyright © Materials Research Society 1997

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References

1. Singer, P., Semiconductor International, 5, p. 88, (1996).Google Scholar
2. Carl, D., Schuchmann, S., Kilgore, M., Swope, R., and Hoek, W. van den, Proceedings of the Twelfth International VMIC, p. 97, (1995).Google Scholar
3. Usami, T., Shimokawa, K., and Yoshimaru, M., Jpn. J. Appl. Phys., 33 (1), 1B, p. 408, (1994).Google Scholar
4. Flinn, R. A., Trojan, P. K., Engineering Materials and Their Applications, 2nd ed. (Houghton Mifflin Company, Boston, 1981), pp. 370, 409.Google Scholar
5. d'Agostino, R., Plasma Deposition, Treatment, and Etching of Polymers, (Academic Press, Inc., San Diego, CA, 1990), p. 96.Google Scholar
6. Takeishi, S., Kudoh, H., Shinohara, R., Hoshino, M., Yamada, M., and Furuyuma, Y., Proceedings of the Second International DUMIC, p. 71, (1996).Google Scholar
7. Endo, K. and Tatsumi, T., J. Appl. Phys., 78 (2), p. 1370, (1995).Google Scholar
8. Liu, X., Zhu, Y., Wang, T., Liu, W., Liu, G., and Chen, J., Gaofenzi Tongzun, 4, p. 300, (1986).Google Scholar
9. Vinogrador, G. K., Slovetskii, D. I., and Timokhov, A. G., Khim. Vys. Energ., 25 (3), p. 268 (1991).Google Scholar
10. Chen, R., Gorelik, V., and Silverstein, M. S., J. Appl. Polym. Sci., 56 (5), p. 615, (1995).Google Scholar
11. Chen, P. and Silverstein, M. S., J. Polym. Sci., Part A: Polym. Chem., 34 (2), p. 207, (1996).Google Scholar
12. Hey, H. P. W., Sluijk, B. G., and Hemmes, D. G., Solid State Tech., 33 (4), p. 139, (1990).Google Scholar
13. Ven, E. van de, Connick, I., Harrus, A. S., Proceedings of the Seventh International IEEE VMIC, p. 194, IEEE, (1990).Google Scholar
14. Chapman, B., Glow Discharge Processes, (John Wiley & Sons, Inc., New York, 1980), p. 163.Google Scholar
15. Nano Instruments, Oak Ridge, TN.Google Scholar
16. Chaing, C., Neubauer, G., Mack, A. S., Yoshioka, K., Cuan, G., Flinn, P. A., and Fraser, D. B., Materials Research Society Symposium Proceedings, vol.265, p. 219, (1992).Google Scholar