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Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

Published online by Cambridge University Press:  25 February 2011

M. Nishitani ,
T. Negami ,
M. Terauchi ,
T. Wada  and
T. Hirao
M. Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. Moriguchi, Osaka 570, Japan
T. Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. Moriguchi, Osaka 570, Japan
M. Terauchi
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. Moriguchi, Osaka 570, Japan
T. Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. Moriguchi, Osaka 570, Japan
T. Hirao
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. Moriguchi, Osaka 570, Japan
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Abstract

Polycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 145
Copyright
Copyright © Materials Research Society 1992

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References

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