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Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE

Published online by Cambridge University Press:  21 February 2011

Robert F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
T. W. Weeks Jr.
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
M. D. Bremser
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
S. Tanaka
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
R. S. Kern
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
Z. Sitar
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
K. S. Ailey
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
W. G. Perry
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
C. Wang
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7907
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Abstract

Organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of A1N and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AIN, GaN and AlxGa1−xN thin films primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces double positioning boundaries in A1N and the alloys at the SiC steps; this sequence problem appears to discourage the two-dimensional nucleation of GaN. Films of these materials grown by MBE at 650°C are textured; monocrystalline films are achieved between 850°C (pure GaN) and 1050°C (pure A1N) by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed. Selected issues surrounding the growth of these materials with particular examples drawn from the authors' research are presented herein.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
2 Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
3 Hiramatsu, K., Itoh, S., Amano, H., Akaski, I., Kuwano, N., Shiraishi, T. and Oki, , J. Cryst. Growth 115, 628 (1991).Google Scholar
5 Khan, M.A., Kuznia, J.N., Olson, D.T. and Kaplan, R., J. Appl Phys. 73, 3108 (1993).Google Scholar
6 Kuznia, J.N., Khan, M.A., Olson, D.T., Kaplan, R. and Freitas, J., J. Appl. Phys. 73, 4700 (1993).Google Scholar
7 Weeks, T. W. Jr., Bremser, M. D., Ailey, K. S., Carlson, E., Perry, W. G. and Davis, R. F., Appl. Phys. Lett. 67, 401 (1955).Google Scholar
8 Strite, S., Ruan, J.. Li, Z., Salvador, A., Chen, J., Smith, D. J., Choyke, W. J., and Morkoç, H., J. Vac. Sci. Technol. B 9, 1924 (1991).Google Scholar
9 Lei, T., Moustakas, T. D., Graham, R. J., He, Y. and Berkowitz, S. J., J. Appl. Phys. 71, 4933 (1992).Google Scholar
10 Okumura, H., Misawa, S., and Yoshida, S., Appl. Phys. Lett. 59, 1058 (1991).Google Scholar
11 Powell, R. C., Lee, N. E., Kim, Y. W. and Greene, J. E., J. Appl. Phys. 73, 189 (1993).Google Scholar
12 Paisley, M. J. and Davis, R. F., J. Crystal Growth 127, 136 (1993).Google Scholar
13 Wang, C. and Davis, R. F., Appl. Phys. Lett. 63, 990 (1993).Google Scholar
14 Hughes, W. C., Rowland, W. H. Jr., Johnson, M. A. L., Fujita, S., Cook, J. W. Jr., and Schetzina, J. F., J. Vac. Sci. Technol. B 13, 1571 (1995).Google Scholar
15 Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, Pt 2, L 797 (1995).Google Scholar
16 Khan, M.A., Kuznia, J.N., Bhattarai, A. R. and Olson, D.T., Appl. Phys. Lett. 62, 1786 (1993).Google Scholar
17 Yoshida, S., Misawa, S. and Gonda, S., Appl. Phys. Lett. 42, 427 (1983).Google Scholar
18 Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
19 Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T. and Oki, K., J. Cryst. Growth 115, 628 (1991).Google Scholar
20 Qian, W., Skowronski, M., De Graef, M., Dovrespike, K., Rowland, L. B. and Gaskill, D. K., Appl. Phys. Lett. 66, 1252 (1995).Google Scholar
21 Moustakas, T. D., Lei, T. and Molnar, R. J., Physica B 185, 36 (1993).Google Scholar
22 Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar