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Room Temperature CW Operation of GaInAsSb/AlGaAsSb Quantum Well Lasers Emitting in the 2.2 to 2.3µm Wavelength Range

Published online by Cambridge University Press:  10 February 2011

C. Mermelstein ,
S. Simanowski ,
M. Mayer ,
R. Kiefer ,
J. Schmitz ,
M. Walther  and
J. Wagner
C. Mermelstein
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
S. Simanowski
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
M. Mayer
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
R. Kiefer
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
J. Schmitz
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
M. Walther
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
J. Wagner
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, mermelstein@iaf.fhg.de
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Abstract

We report on room temperature cw operation of type-I semiconductor quantum well (QW) laser diodes based on the GaInAsSb/AIGaAsSb/GaSb material system emitting beyond 2.2 µm. Lasing is observed in cw mode up to at least 320 K. A high internal quantum efficiency of 65% and a low internal loss coefficient of 5 cm1have been achieved for a single QW (SQW)large optical cavity laser at 280 K. An extrapolated threshold current density for infinite cavity length of 144 A/cm2and 55 A/cm2has been deduced for the 3 QW and SQW lasers, respectively, which scales with the number of QWs. A maximum cw light output power of 230 mW at 280 K heatsink temperature was obtained for a 3 QW large optical cavity laser with HR/AR coated mirror facets, mounted substrate-side down.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 53
Copyright
Copyright © Materials Research Society 2000

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