Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-24T09:24:35.425Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN

Published online by Cambridge University Press:  21 March 2011

M. O. Manasreh  and
B. D. Weaver
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131
B. D. Weaver
Affiliation:
Naval Research Lab, 4555 Overlook Ave, SW, Washington, DC 20375
Get access

Abstract

Thermal annealing effects on carbon-hydrogen (C-H) complexes defects in AlGaN grown on sapphire by metalorganic chemical vapor deposition (MOCVD) technique have been investigated using Fourier transform infrared spectroscopy (FTIR). The CH complexes in AlGaN, formed either during growth or by proton irradiation, exhibit five local vibrational modes (LVMs) due to the symmetric and asymmetric vibrational stretching modes of C-H in CHn (n=1–;3) defect complexes. It was found that the annealing temperature (Ta) of 500°C is sufficient enough to dissociate most of the C-H complexes in AlGaN samples. A turning point annealing temperature is found around 300°C for un-irradiated Mg-doped sample, below which the total integrated area of the C-H LVMs continued to increase with increasing annealing temperature and reach the maximum value around 300°C. At Ta > 300°C, the total integrated area of the C-H LVMs starts to decrease and the C-H complexes seem to be completely depleted at Ta > 600°C. The depleted C-H LVMs were observed to partially recover after thermal annealing at Ta > 500°C and waiting for aging periods of several days. This recovery behavior is explained in terms of the hydrogen being remained inside the crystal after the dissociation of C-H complexes, subsequent diffusion and recombining again with carbon atom to reform C-H complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H10.4.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nakamura, S., Mukai, T., and Smoh, M., Appl. Phys. Lett. 64, 1687(1994).Google Scholar
[2] Nakamura, S., Fasol, G., in: “The Blue Laser Diode”, (Springer, New York, 1997).Google Scholar
[3] Shur, M.S. and Khan, M.A., GaN/AlGaN Heterostructure devices: Photodetectors and Field Effect Transistors, MRS Bulletin 22(2), pp. 44–50, Feb. (1997).Google Scholar
[4] Razeghi, M. and Rogalski, A., Semiconductor ultraviolet detectors, J. Appl. Phys. 79(10), 7433 (1996).Google Scholar
[5] Doverspike, K., Wickenden, A.E., Binari, S.C., Gaskill, D.K., Freitas, J. A., Mat. Res. Soc. Symp. Proc. 395 (1996) 897.Google Scholar
[6] Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys., Part 1 31, 1258 (1992).Google Scholar
[7] Neugebauer, J. and Van de Walle, C. G., Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
[8] Gotz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D., and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
[9] Yi, G. C., and Wessels, B. W., Appl. Phys. Lett. 70(3), 357 (1996).Google Scholar
[10] Wieder, H., Cardona, M., and Guarnieri, C. R., Phys. Status Solidi B 92, 99 (1979).Google Scholar
[11] Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
[12] Dischler, B., Bubenzer, A., and Koidl, P., Solid State Commun. 48, 105 (1983).Google Scholar
[13] “GaN and Related Materials”, edited by Pearton, S. J., Vol 2, Chapter 11, (Gordon and Breach, Amsterdam, 1997).Google Scholar
[14] Hoffmann, L., Lavrov, E. V., Nielsen, B. Bech, Hourahine, B., Jones, R., Öberg, S. and Briddon, P. R., Phys. Rev. B 61 No. 24, 16659 (2000).Google Scholar