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Frequency Spectra of Fatigue of PZT and other Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

Xiaofeng Du  and
I-Wei Chen
Xiaofeng Du
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, PA 19104
I-Wei Chen
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, PA 19104
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Abstract

Polarization and polarization fatigue of PZT and other ferroelectric thin films have been studied via the frequency spectra of D-E hysteresis. The coercive field (Ec) of PZT thin films has been found strongly dependent on the measuring frequency, while a relatively flat frequency response is observed with SrBi2Nb2O9 thin films. The different fatigue behavior can be attributed to such a difference in the frequency response. Physical models have been suggested to for domain wall movement in PZT and SrBi2Nb2O9 thin films. Based on these observations, a methodology has been proposed to evaluate the high frequency and fatigue properties of ferroelectric thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 311
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Carrano, J., Sudhama, C., Chikarmane, V., Lee, J., Tasch, A., Shepherd, W. and Abt, N., IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 38[6], 690 (1991)Google Scholar
2. Zurcher, P., Jones, R. E., and Chu, P. Y., IEEE Transactions on Components, Packaging & Manufacturing Technology, A20, 175 (1997).Google Scholar
3. Sawyer, C. B. and Tower, C. H., Phys. Rev. 35, 269 (1930)Google Scholar
4. Lee, J., Ramesh, R., and Keramidas, V. G., Mat. Res. Soc. Symp. Proc, 361, 67 (1995)Google Scholar
5. Hase, T., Smiosaki, T., Jpn. J. Appl. Phys., 30[9B], 2159(1991).Google Scholar
6. Jones, R. E., Maniar, P. D., Moazzami, R., Zurcher, P., Witowski, J. Z., Lii, Y. T., Chu, P., Gillespie, S. J., Thin Solid Films, 270[l-2], 584 (1995)Google Scholar
7. Iijima, K., Ueda, I., Kugimiya, K., Jpn. J. Appl. Phys., 30[9B], 2149(1991)Google Scholar
8. Du, X. and Chen, I-Wei, “Ferroelectric Thin Films of Bismuth-containing Layered Perovskites Part I-III”, submitted to J. Am. Ceram. Soc. Google Scholar
9. Kocks, U. F., Argon, A. S., and Ashby, M. S., “Thermodynamics and Kinetics of Slip”, Pergamon Press, New York, (1975)Google Scholar
10. Vkudzin, A. and Guenoka, E., Fizika Tverdogo Tela, 11 [6] 1572(1969).Google Scholar