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Calculations Pertaining to Raman Scattering During Laser Annealing of Ion-Implanted Silicon*

Published online by Cambridge University Press:  15 February 2011

R. F. Wood ,
D. H. Lowndes  and
G. E. Giles
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
G. E. Giles
Affiliation:
Computer Sciences Division, UCCND, Oak Ridge, Tennessee
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Abstract

Compaan and co-workers have reported the results of time-resolved optical experiments on ion-implanted silicon which they claim prove the melting model of pulsed laser annealing cannot be correct. These results concern the rapid onset of a Raman signal after a heating laser pulse, the simultaneous occurrence of a Raman signal and the high reflectivity phase characteristic of molten silicon, and the lattice temperature measured by the Raman Stokes/anti-Stokes intensity ratio. In this paper, we show by detailed numerical calculations with the melting model that there is, in fact, excellent agreement between the results of the calculations and the experimental results reported by Compaan and co-workers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 67
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Science, U.S. Department of Energy, under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

1. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
2. Lo, H. W. and Compaan, A., Appl. Phys. Lett. 38, 179 (1980).Google Scholar
3. Compaan, A., Lo, H. W., Aydinli, A., and Lee, M. C. in: Laser and Electron-Beam Solid Interactions and Materials Processing, Gibbons, J. F., Hess, L. D., and Sigmon, T. W., eds. (Elsevier North-Holland, New York, 1981) p. 13.Google Scholar
4. Lee, M. C., Lo, H. W., Aydinli, A., and Compaan, A., Appl. Phys. Lett. 38, 499 (1981).CrossRefGoogle Scholar
5. Auston, D. H., Surko, C. M., Venkatesan, T.N.C., Slusher, R. E., and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).Google Scholar
6. Lowndes, D. H. and Wood, R. F., Appl. Phys. Lett. 38, 971 (1981).CrossRefGoogle Scholar
7. Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
8. Lowndes, D. H. (submitted for publication).Google Scholar
9. Lowndes, D. H., Jellison, G. E. Jr., and Wood, R. F. (these Proceedings).Google Scholar
10. Dash, W. C. and Newman, R., Phys. Rev. 99, 1151 (1955).CrossRefGoogle Scholar
11. Renucci, J. B., Tyte, R. N., and Cardona, M., Phys. Rev. B 11, 3885 (1975).CrossRefGoogle Scholar
12. Jellison, G. E. and Modine, F. A. (submitted for publication).Google Scholar
13. Of course, the value of σ may also be temperature dependent but, as far as we have been able to determine, there have been no attempts to measure resonance Raman cross sections at elevated temperatures. Moreover, the extraction of temperature-dependent Raman cross sections from experimental data would involve temperature-dependent absorption coefficients, which as we have seen have not yet been measured with great accuracy.Google Scholar
14. Wood, R. F., Rasolt, M., and Jellison, G. E. Jr. (these Proceedings).Google Scholar