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Light Emitting Micropatterns of Porous Semiconductors

Published online by Cambridge University Press:  09 August 2011

D. J. Lockwood ,
P. Schmuki  and
L. E. Erickson
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, Canada K IA 0R6
P. Schmuki
Affiliation:
Swiss Federal Institute of Technology, ETH/EPFL, Dept. of Materials Science, LC-DMX, CH-1015 Lausanne, Switzerland
L. E. Erickson
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, Canada K IA 0R6
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Abstract

We report a principle that allows writing visible light emitting semiconductor patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous semiconductor growth can be electrochemically initiated preferentially at surface defects created in an n-type substrate by Si++ focused ion beam bombardment. For n-type material in the dark, the electrochemical pore formation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process. Visible light emitting patterns of porous Si and GaAs have been created in this way. At present, the size of the structures is limited only by the diameter of the writing ion beam, and pattern diameters in the 50–200-nm range are possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 3
Copyright
Copyright © Materials Research Society 1999

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