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The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Tim Michael Smeeton ,
Mathieu Sénès ,
Katherine L Smith ,
Stewart E Hooper  and
Jon Heffernan
Tim Michael Smeeton
Affiliation:
tim.smeeton@sharp.co.uk, Sharp Laboratories of Europe, Advanced Optoelectronic Devices, Sharp Laboratories of Europe,, Edmund Halley Road,, Oxford Science Park, Oxford, OX4 4GB, United Kingdom, +44 1865 715443
Mathieu Sénès
Affiliation:
tim.smeeton@sharp.co.uk, Sharp Laboratories of Europe, Advanced Optoelectronic Devices, Sharp Laboratories of Europe,, Edmund Halley Road,, Oxford Science Park, Oxford, OX4 4GB, United Kingdom, +44 1865 715443
Katherine L Smith
Affiliation:
mathieu.senes@sharp.co.uk, Sharp Laboratories of Europe, Edmund Halley Road,, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
Stewart E Hooper
Affiliation:
katherine.smith@sharp.co.uk, Sharp Laboratories of Europe, Edmund Halley Road,, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
Jon Heffernan
Affiliation:
stewart.hooper@sharp.co.uk, Sharp Laboratories of Europe, Edmund Halley Road,, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
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Abstract

The structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

Keywords

molecular beam epitaxy (MBE)III-Vnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-28
Copyright
Copyright © Materials Research Society 2007

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References

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