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Cu2ZnSnS4 thin film solar cell fabricated by magnetron sputtering and sulfurization

Published online by Cambridge University Press:  28 February 2014

Jian Chen ,
Chang Yan ,
Wei Li ,
Ning Song ,
Fangyang Liu ,
Shujuan Huang ,
Xiaojing Hao  and
Martin A. Green
Jian Chen
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Chang Yan
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Wei Li
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Ning Song
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Fangyang Liu
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Shujuan Huang
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Xiaojing Hao
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
Martin A. Green
Affiliation:
School of Photovoltaics and Renewable Energy, University of New South Wales, NSW 2052, Australia.
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Abstract

In this work, sulfurizing metal precursors prepared by magnetron sputtering was applied in Cu2ZnSnS4 (CZTS) thin film fabrication. Three precursor structures, namely substrate/ Zn/(Cu&Sn), substrate/Zn/Cu/Sn/Cu and substrate/Zn/Sn/Cu, were compared for their synthesized CZTS film quality. It is notable that CZTS film made of the precursor structure of substrate/Zn/(Cu&Sn) has the best film quality with no obvious voids and biggest average grain size. When applying this precursor structure into device fabrication, a working CZTS device with an efficiency of 2.26% was made. The impact of metal precursors on the structural property of CZTS film were characterised by SEM, XRD, Raman and TEM. Thick MoS2 interfacial layer (∼200nm) between absorber and back Mo contact and ZnS formed in the front and back absorber regions are the possible reasons limiting short-circuit current and fill factor of the cell.

Keywords

photovoltaicthin filmsputtering
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1638: Symposium W – Next-Generation Inorganic Thin-Film Photovoltaics , 2014 , mrsf13-1638-w09-01
Copyright
Copyright © Materials Research Society 2014 

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References

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