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Control of the Initial Stage of Ge Overgrowth on CaF2/Si Structures by Electron Beam Exposure

Published online by Cambridge University Press:  25 February 2011

S. Kanemaru
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 JAPAN
H. Ishiwara
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 JAPAN
S. Furukawa
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 JAPAN
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Abstract

The initial stage of Ge overgrowth on CaF2/Si structures was controlled by electron beam (e-beam) exposure through a room-temperature-deposited thin Ge layer on CaF2. It was found that the island growth of Ge was prevented in the e-beam exposed region and the crystalline quality and the surface flat-ness of the Ge film were much improved. From several experimental results, a growth model that e-beam dissociates the surface F atoms of CaF2 and improves the wettability between Ge and CaF2 is proposed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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