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A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers

Published online by Cambridge University Press:  26 February 2011

Jeff F. Young ,
H. R. Jensen  and
Martine Simard-Normandin
Jeff F. Young
Affiliation:
Division of Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada KlA 0R6
H. R. Jensen
Affiliation:
Division of Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada KlA 0R6
Martine Simard-Normandin
Affiliation:
Northern Telecom Electronics Ltd., Ottawa, Ontario, Canada K1Y 4H7
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Abstract

A simple, non-destructive technique to characterize the properties of ion-implanted semiconductor wafers is described. The method consists of measuring the infrared attenuated total reflection (ATR) spectrum of the implanted layer/air interface and fitting it with a calculated spectrum which takes account of the free carrier density profile and any possible residual damage and/or amorphization. The results obtained on boron and implanted Si wafers, annealed at different temperatures in a rapid thermal annealer, are compared with their respective SIMS profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 83
Copyright
Copyright © Materials Research Society 1986

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