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Electroluminescence Studies Of Si Bulk Materials Using Al-Si Schottky Diodes

Published online by Cambridge University Press:  10 February 2011

Chun-Xia Du ,
Wei-Xin Ni ,
Kenneth B. Joelsson ,
Guang-Di Shen  and
Göran V. Hansson
Chun-Xia Du
Affiliation:
Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
Wei-Xin Ni
Affiliation:
Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
Kenneth B. Joelsson
Affiliation:
Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
Guang-Di Shen
Affiliation:
Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
Göran V. Hansson
Affiliation:
Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Electroluminescence (EL) of Si bulk materials has been studied using lowly doped substrate with two Al-Si Schottky contacts. By applying a forward bias on the structure, the intense light emissions at 1.094 eV due to the TO-phonon assisted recombination was obtained at 40 K while other TA- and 2TO-associated transitions were also observed. The Si-TO EL peak persists up to RT with a radiative decay of ∼ 5 μs. EL emission mechanisms of these Si Schottky diodes are discussed based on temperature dependent- and injection current-dependent EL measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 157
Copyright
Copyright © Materials Research Society 1998

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