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Low Temperature Growth of Crystalline Silicon Thin Films by ECR Plasma CVD

Published online by Cambridge University Press:  10 February 2011

Licai Wang  and
H S Reehal
Licai Wang
Affiliation:
School of Electronic, Electrical and Information EngineeringSouth Bank UniversityLondonSE1 OAA, UKwangl@vax.sbu.ac.uk
H S Reehal
Affiliation:
School of Electronic, Electrical and Information EngineeringSouth Bank UniversityLondonSE1 OAA, UKwangl@vax.sbu.ac.uk
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Abstract

Crystalline silicon films have been deposited on silicon and metal-coated coming 7095 glass substrates at temperatures of 280 ˜ 680°C by electron cyclotron resonance (ECR) plasma assisted chemical vapor deposition (PACVD) using an ultrahigh vacuum chamber and SiH4 as the feedstock. X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) have been used to characterize the films. At temperatures of ˜280 °C, the as-grown films are microcrystalline with crystalline fractions between 50–97%. From XRD patterns, randomly oriented crystalline silicon grains were clearly present in the films with the grain sizes estimated to be between 170 – 370Å. As the growth temperature is increased to 470°C, epitaxial growth on silicon is observed at growth rates of 240Å/min without bias or hydrogen plasma treatment before film growth. N-type doping of the layers has been achieved using PH3 as the doping gas and solar cells with ECR grown emitters fabricated on 15μm thick p-type epilayers on p+ substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 83
Copyright
Copyright © Materials Research Society 1998

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References

[1] Green, M.A., Solar Energy Material and Solar Cells, 31, 51 (1993).Google Scholar
[2] Yamamoto, K., Nakashima, A., Jpn J.Appl.Phys., 33, 1751 (1994).Google Scholar
[3] Shiraki, Y., Katayama, Y., Kobayashi, K.L.I., and Komastsubara, K.F., J. Cryst. Growth 45, 287 (1978).Google Scholar
[4] Comfort, J. and Reif, R., J.Electrochem. Soc. 136, 2386 (1989).Google Scholar
[5] Meyerson, B.S., IBM J.Res.Dev. 34, 806 (1990).Google Scholar
[6] Mui, D.S.L., Fang, S.F. and Morkoc, H., Appl. Phys. Lett. 59, 1887 (1991).Google Scholar
[7] Fukuda, K., Muroda, J., Ono, S., Matsuura, T., Uetake, H., and Ohmi, T., Appl. Phys. Lett. 59, 2853 (1991).Google Scholar
[8] DeBoer, S. and Dalal, V., 1st IEEE WCPEC, 5 (1994).Google Scholar
[9] Nagai, I., Takahagi, T., Ishitani, A., Kuroda, H. and Yoshikawa, M., J.Appl. Phys, 64, 5183 (1988).Google Scholar
[10] Tae, H.S., Hwang, S.H., Park, S.J., Yoon, E., and Whang, K.W., Appl. Phys.Lett. 64, 1021 (1994).Google Scholar
[11] Lipson, H.S., “Crystals and X-Rays”, Wykeham Publication Ltd., London, (1970).Google Scholar
[12] Arhue, W.J., Rogers, J.L. and Andry, P.S., Appl. Phys.Lett., 68, 349 (1996).Google Scholar
[13] Kaneko, T., Onisawa, K., Wakagi, M., Kita, Y. and Minemura, T., Jpn.J.Appl.Phys. 32, 4907 (1993).Google Scholar
[14] Tsai, M.J. and Cheng, H.C., Tech Rep. IEICE, 93, 25 (1993).Google Scholar
[15] Warhue, W.J., Rogers, J.L., and Andry, P.S., Appl.Phys.Lett. 63, 349 (1996).Google Scholar
[16] Deboer, S.J. and Datal, V.L., Appl.Phys.Lett. 66, 2528 (1995).Google Scholar
[17] Fukudo, K., Murota, J. and Ono, S., Appl. Phys.Lett. 59, 2853 (1991).Google Scholar