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Lead Zirconate Titanate Films Produced by ‘Facing Targets’ RF-Sputtering

Published online by Cambridge University Press:  16 February 2011

R. A. Roy ,
K. F. Etzold  and
J. J. Cuomo
R. A. Roy
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
K. F. Etzold
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
J. J. Cuomo
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The growth of ferroelectric lead zirconate titanate (PZT) films by rf-sputtering using facing targets is described. This study has focused on producing thin (<500 nm) PZT films on a wide range of substrates including magnesium oxide, spinel, alumina, silicon oxide, and the respective substrates coated with platinum. Deposition was from two opposed targets separated by 10–15 cm, with the substrate plane normal to the targets and outside the cylinder defined by the two targets. This geometry was chosen to obtain compositional uniformity and avoid ion bombardment effects. The deposition temperatures ranged from RT to 700 °C and the process gas was a mixture of argon and oxygen. Effects of deposition conditions and post-deposition annealing on film composition, microstructure, and properties were evaluated using Rutherford backscattering spectroscopy (RBS), x-ray diffraction, optical and electron microscopy, and various electrical measurements. Optimization of process conditions is discussed in terms of phase purity, preferred orientation, and minimization of electrode interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 77
Copyright
Copyright © Materials Research Society 1990

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References

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