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FLB/TEM Observation of Defect Structure Underneath an Indentation in Silicon

Published online by Cambridge University Press:  10 February 2011

A. Shimatani ,
T. Nango ,
Suprijadi  and
H. Saka
A. Shimatani
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan, saka@numse.nagoya-u.ac.jp
T. Nango
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan, saka@numse.nagoya-u.ac.jp
Suprijadi
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan, saka@numse.nagoya-u.ac.jp
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan, saka@numse.nagoya-u.ac.jp
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Abstract

Defect structure beneath and near Vickers indentations made with loads of 10, 25 and 50g in Si has been studied in detail by TEM. Both plan-view and cross-sectional observations have been made. Beneath the 10 and 25g indentations an amorphous phase is formed, but beneath the 50g indentation no amorphous phase is formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 522: Symposium T – Fundamentals of Nanoindentation & Nanotribology , 1998 , 71
Copyright
Copyright © Materials Research Society 1998

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