Hostname: page-component-7c8c6479df-xxrs7 Total loading time: 0 Render date: 2024-03-28T06:02:27.083Z Has data issue: false hasContentIssue false

A Study of Intermetallic Compound Development In Nickel-Tin Interfacial Zones

Published online by Cambridge University Press:  22 February 2011

Charles W. Allen
Affiliation:
Department of Metallurgical Engineering and Materials Science, University of Notre Dame, Notre Dame, IN 46556.
Mark R. Fulcher
Affiliation:
Department of Metallurgical Engineering and Materials Science, University of Notre Dame, Notre Dame, IN 46556.
Amarjit S. Rai
Affiliation:
Department of Metallurgical Engineering and Materials Science, University of Notre Dame, Notre Dame, IN 46556.
Gordon A. Sargent
Affiliation:
Department of Metallurgical Engineering and Materials Science, University of Notre Dame, Notre Dame, IN 46556.
Albert E. Miller
Affiliation:
Department of Metallurgical Engineering and Materials Science, University of Notre Dame, Notre Dame, IN 46556.
Get access

Abstract

Interdiffusion and intermetallic formation in Ni-Sn interfacial zones are examined by X-ray diffraction in samples prepared by electroplating of Sn at room temperature. For the case of plating directly onto electropolished nickel, only very sluggish formation of Ni3Sn4 was observed at 190 C. In contrast, when the nickel surface is chemicaly or chemically-abrasively activated prior to plating, a thin layer of Ni3Sn forms at the initial interface at room temperature, and subsequent annealing at 100 and 190 C produces all intermetallics predicted by the equilibrium phase diagram including Ni3Sn, indicating that the absence of Ni3Sn usually observed arises from its failure to nucleate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kay, P. J. and MacKay, C. A., Trans. Inst. Met. Finish, 54, 68 (1976).CrossRefGoogle Scholar
[2] Kang, S. K. and Ramachandran, V., Scripta Met., 14, 421 (1980).CrossRefGoogle Scholar
[3] Hamm, R. A. and Vandenberg, J. M., Mat. Res. Soc. Symp. Proc. Vol.25, 163 (1984).CrossRefGoogle Scholar
[4] Coulman, B., Chen, H. and Rehn, L. E., J. Appl. Phys., in press (1984).Google Scholar
[5] Coulman, B. and Chen, H., MRS Symp. “Epitaxy, Thin Films and Interfaces, Boston (1984).Google Scholar
[6] Cullity, B. D., Elements of X-ray Diffraction, 2nd Ed., Addison-Wesley, p. 134 (1978).Google Scholar
[7] Goesele, U. and Tu, K. N., J. Appl. Phys., 53 3252 (1982).CrossRefGoogle Scholar
[8] Hilliard, J. E., Phase Transformations, Chap. 12, Am. Soc. for Met.(1970).Google Scholar
[9] Kuczynski, G. C., Private Communication (1984).Google Scholar