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A Novel Lateral Field Emission Triode for Microwave Application

Published online by Cambridge University Press:  10 February 2011

C-M Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail:, mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-S Lim
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail:, mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-K Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail:, mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
Y-I Choi
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail:, mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
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Abstract

We propose a novel lateral field emission triode, which does not require any additional vacuum sealing process and exhibits superb field emitter triode performance. The purpose of this paper is to compare titanium polycide tip with polycrystalline silicon tip. A new experimental results of the device, such as variation of tip material, device stability experiment, measurement of the novel device in vacuum chamber in order to verify the proposed vacuum sealing process, and transconductance characteristics at each current level.

The minimum turn-on anode to cathode voltage of titanium polycide tip is considerably decreased compared with polysilicon tip. The anode current measured in 10−8 Torr vacuum chamber is similar to the anode current measured in atmospheric pressure, which shows that the proposed vacuum sealing process is reliable. The stable current of 300μΑ is maintained during 60 h.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1 Spindt, C. A., Holland, C. E., Rosenberg, A. and Brodie, I.: IEEE Trans. Electron Devices 38 (1991) 2355.Google Scholar
2 Spindt, C.A., Holland, C. E., Schwoebel, P. R. and Brodie, I.: IEDM-95 (1995) p. 389.Google Scholar
3 Busta, H. H, Pogemiller, J. E. and Roth, M. F.: IEDM-89 (1989) p. 533.Google Scholar
4 Mei, Q., Tamagawa, T., Ye, C., Lin, Y., Zurn, S. and Polla, D. L. : J. Vac. Sci. Technol. B11(2) (1993) 493.Google Scholar
5 Park, C. M., Lim, M. S., Han, M. K. and Choi, Y. I.: IEDM-96 (1996) p. 305.Google Scholar
6 Tsong, T. T. : IEEE Trans. Electron Devices 38 (1991) 2317.Google Scholar