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Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth

Published online by Cambridge University Press:  21 February 2011

A. Nuruddin ,
J. R. Doyle  and
J. R. Abelson
A. Nuruddin
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
J. R. Doyle
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
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Abstract

Using a “macro-trench” technique, the surface reaction probabilities β of the a-Si:H growth precursors for remote hollow cathode silane discharge (HC) and reactive magnetron sputter deposition (RMS) are measured. Both deposition methods produce state of the art photo-electronic quality a-Si:H. For the HC case, β= 0.28 ± 0.05, whereas for RMS deposition β ≈ 0.97 ± 0.05. We conclude that β is not universally correlated with film quality, and discuss mitigating factors present in RMS deposition that permit high quality film to be deposited despite the high film precursor reactivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 33
Copyright
Copyright © Materials Research Society 1992

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References

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