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Evaluation of Conductive Region in PZT film Induced by Low Temperature Hydrogen Treatment on PT/PZT/PT Capacitor

Published online by Cambridge University Press:  10 February 2011

Hiroyuki Kanaya ,
Yoshinori Kumura ,
Iwao Kunishima ,
Shin-Ichi Tanaka ,
Tsuyoshi Iwamoto  and
Yukio Takahagi
Hiroyuki Kanaya
Affiliation:
Microelectronics Engineering Laboratory, Semiconductor Company Toshiba Corp., 8, Shinsugita-cho, Isogo-ku, Yokohama 235–8523, Japan, kanaya@amc.toshiba.co.jp
Yoshinori Kumura
Affiliation:
Microelectronics Engineering Laboratory, Semiconductor Company Toshiba Corp., 8, Shinsugita-cho, Isogo-ku, Yokohama 235–8523, Japan, kanaya@amc.toshiba.co.jp
Iwao Kunishima
Affiliation:
Microelectronics Engineering Laboratory, Semiconductor Company Toshiba Corp., 8, Shinsugita-cho, Isogo-ku, Yokohama 235–8523, Japan, kanaya@amc.toshiba.co.jp
Shin-Ichi Tanaka
Affiliation:
Microelectronics Engineering Laboratory, Semiconductor Company Toshiba Corp., 8, Shinsugita-cho, Isogo-ku, Yokohama 235–8523, Japan, kanaya@amc.toshiba.co.jp
Tsuyoshi Iwamoto
Affiliation:
Corporate Manufacturing Engineering Center, Toshiba Corp., 33, Shin-isogo-cho, Isogo-ku, Yokohama 235–0017, Japan
Yukio Takahagi
Affiliation:
Environmental Engineering & Analysis Center, Toshiba Corp., 1, Komukai toshiba-cho, Saiwai-ku, Kawasaki 210–0901, Japan
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Abstract

A conductivity difference in a PZT film in a Pt/PZT/Pt capacitor was found by novel charged-up SIMS analyses for the first time. The charged-up SIMS technique was useful for evaluating the conductivity profile in the PZT film. It was found that the conductive region existed in an as-prepared PZT film near the bottom Pt electrode. After hydrogen plasma treatment at 45°C, the conductive region increased in the PZT film near the top electrode. Electrical measurements showed that the leakage current of the capacitor increased after hydrogen treatment. The hydrogen was expected to reduce PZT both at grain boundaries and the electrode-PZT interfaces, and to form the conductive region, which induced an increase in leakage current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 115
Copyright
Copyright © Materials Research Society 2000

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References

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