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XPS and STM Studies on Initial Oxidation of Si(110)-16x2

Published online by Cambridge University Press:  01 February 2011

Maki Suemitsu
Affiliation:
suemitsu@cir.tohoku.ac.jp, Tohoku University, Center for Interdisciplinary Research, Aramaki Aza-Aoba 6-3, Aoba-ku, Sendai, 980-8578, Japan
Hideaki Togashi
Affiliation:
togashi@suemitsu.riec.tohoku.ac.jp, Tohoku University, Sendai, 980-8578, Japan
Atsushi Kato
Affiliation:
kato@suemitsu.riec.tohoku.ac.jp, Tohoku University, Sendai, 980-8578, Japan
Yuya Takahashi
Affiliation:
takahashi@suemitsu.riec.tohoku.ac.jp, Tohoku University, Sendai, 980-8578, Japan
Atsushi Konno
Affiliation:
konno@suemitsu.riec.tohoku.ac.jp, Tohoku University, Sendai, 980-8578, Japan
Yoshihisa Yamamoto
Affiliation:
yamamoto@cir.tohoku.ac.jp, Tohoku University, Sendai, 980-8578, Japan
Yuden Teraoka
Affiliation:
yteraoka@spring8.or.jp, Japan Atomic Energy Agency (JAEA), Kouto, Sayo-cho, 679-5198, Japan
Akitaka Yoshigoe
Affiliation:
yoshigoe@spring8.or.jp, Japan Atomic Energy Agency (JAEA), Kouto, Sayo-cho, 679-5198, Japan
Hidehito Asaoka
Affiliation:
asaoka.hidehito@jaea.go.jp, Japan Atomic Energy Agency (JAEA), Tokai, 319-1195, Japan
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Abstract

The initial oxidation of Si(110)-16×2 clean surface has been investigated by using real-time synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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