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Effect of Atomic Structure at the Epitaxial CaF2 /Si(111) Interface on Electrical Properties

Published online by Cambridge University Press:  26 February 2011

J.L. Batstone ,
Julia M. Phillips  and
E.C. Hunke
J.L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
E.C. Hunke
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

High resolution electron microscopy has been used to determine the atomic structure at the epitaxial CaF2 /Si(111) interface before and after a rapid thermal anneal. Direct Ca-Si bonding at the interface, with 8-fold coordinated Ca atoms is observed in as-grown layers. Fluorine is preferentially removed from the interface during a rapid thermal anneal leaving 5-fold coordinated Ca atoms. A dramatic improvement in the electrical properties of the interface is observed after annealing. The measured interface state density is reduced from ≳1013 cm−2 to ≲1011cm−2. This has been correlated with the removal of F from the interface. No evidence for direct F-Si bonding is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 45
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Permanent addresss: Memphis State University, Memphis, TN

References

REFERENCES

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