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Self-Assembling and Ordering of Ge/Si Quantum Dots on Flat and Nanostructured Surfaces

Published online by Cambridge University Press:  21 March 2011

N. Motta ,
A. Sgarlata ,
A. Balzarotti  and
F. Rosei
N. Motta
Affiliation:
INFM Dipartimento di Fisica, Universitá di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy INFM Dipartimento di Fisica, Università di RomaTre, via Vasca Navale 84, I-00146 Roma, Italy
A. Sgarlata
Affiliation:
INFM Dipartimento di Fisica, Universitá di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy
A. Balzarotti
Affiliation:
INFM Dipartimento di Fisica, Universitá di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy
F. Rosei
Affiliation:
INFM Dipartimento di Fisica, Universitá di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy Institute of Physics and Astronomy and CAMP, University of Århus, 8000 C Århus, Denmark
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Abstract

We have studied by Scanning Tunneling Microscopy (STM) the effect of step bunching on Ge/Si(111) epitaxy. We have verified that self-organization of Ge islands is greatly influenced by “step bunching” which arises from the flash-annealing procedure used to reconstruct the Si surface. Two different growth regimes arise: initially islands nucleate and evolve only at steps, up to complete ripening; subsequently the same evolution is observed on flat areas of the sample. The average distance between islands and steps is nearly constant, originating a single row of equally spaced islands, followed by other rows of islands in between. The exploitation of this phenomenon, which is governed by the surface diffusion length of Ge on Si (estimated from our data) and by the terrace width, constitutes one possible path to achieve self-organization of quantum dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 707: Symposium AA – Self-Assemble Processes in Materials , 2001 , AA3.2.1/N2.2.1
Copyright
Copyright © Materials Research Society 2002

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References

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