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Study of Back-Channel Defect States on Bottom-Gate IGZO TFTs Using Capacitance-Voltage Analysis

Published online by Cambridge University Press:  23 February 2015

T. Mudgal ,
N. Walsh ,
N. Edwards ,
R.G. Manley  and
K.D. Hirschman
T. Mudgal
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
N. Walsh
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
N. Edwards
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
R.G. Manley
Affiliation:
Corning Incorporated, Science and Technology Division Corning, New York, 14870, USA
K.D. Hirschman
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
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Abstract

This work investigates the quality of back-channel passivation applied to sputter-deposited IGZO bottom-gate TFTs. Passivation materials investigated were alumina, silicon dioxide, and B-staged bisbenzocyclobutene-based (BCB) resins. Sputtered quartz and PECVD (TEOS) SiO2 rendered the IGZO material highly conductive (ρ < 0.01 Ω·cm), with subsequent annealing in oxidizing ambient unable to restore a high-resistivity state. Appropriate channel resistivity was restored on devices passivated with electron-beam evaporated alumina and spin-coated BCB when followed by annealing in air. Alumina passivated devices demonstrated improved stability; however slight distortions in measured I-V and C-V characteristics were observed. TCAD simulation was used to develop an IGZO material/device model, with results indicating the significant presence of oxygen-vacancy (OV) interface traps and negative fixed charge remaining at the back-channel.

Keywords

defectselectronic materialthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1731: Symposium O – Oxide Semiconductors , 2015 , mrsf14-1731-o08-03
Copyright
Copyright © Materials Research Society 2015 

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References

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