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Concentration-Dependence of Self-Interstitial and Boron Diffusion in Silicon

Published online by Cambridge University Press:  01 February 2011

Wolfgang Windl
Wolfgang Windl*
Affiliation:
windl.1@osu.edu, The Ohio State University, Materials Science and Engineering, 2041 College Rd, Columbus, OH, 43210-1178, United States
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Abstract

In this paper, we discuss the accuracy of ab-initio calculations for self-interstitial and boron dif-fusion in silicon in light of recent experimental data by de Salvador et al. and Bracht et al. Map-ping the experimental data onto the activation energy vs. Fermi level representation commonly used to display ab-initio results, we show that the experimental results are consistent with each other. While the theoretical LDA value for the boron activation energy as a function of the Fermi level agrees well with experiment, we find for the self-interstitial in line with other calculations an underestimation of the experimental values, despite using total-energy corrections.

Keywords

diffusionBSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E06-08
Copyright
Copyright © Materials Research Society 2008

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