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Field Effect Controlled Photoresistors Based on Chemically Deposited PbS Films

Published online by Cambridge University Press:  21 March 2011

Eugenia Pentia ,
Lucian Pintilie ,
Ion Matei  and
Ioana Pintilie
Eugenia Pentia
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania+401-4930267; epentia@alpha1.infim.ro
Lucian Pintilie
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania+401-4930267; epentia@alpha1.infim.ro
Ion Matei
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania+401-4930267; epentia@alpha1.infim.ro
Ioana Pintilie
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania+401-4930267; epentia@alpha1.infim.ro
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Abstract

MOS-like structures were obtained by chemical deposition of a polycrystalline PbS thin film on top of a silicon dioxide/Si substrate. Gold ohmic electrodes in coplanar configuration were subsequently deposited by vacuum evaporation on PbS surface (drain and source electrodes). The gate aluminum electrode was deposited on the back of the Si substrate. The dependence of the photoconductive signal, generated in the PbS film, on the gate voltage was studied for wavelengths ranging between 800 nm and 3000 nm at room temperature as well as at low temperatures. It was found that the relative variation of the signal could be as high as 50 % for gate voltages ranging between −30 V and +30 V. Two possible mechanisms are proposed to explain the signal variation with the gate voltage: 1) Variation of the depleted region's thickness in the PbS film, that leads to a variation of the conduction channel's resistance (the reference resistance called, also, the dark resistance), 2) The possible variation of the majority carriers (holes) life-time due to the electron blocking at the PbS/oxide interface when positive gate voltages are applied on the back electrode. Integrated IR detectors with controlled sensitivity in the 800–3000 nm range can be manufactured at a relatively low cost using the PbS/oxide/Si MOS-like structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.10.1
Copyright
Copyright © Materials Research Society 2002

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