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Prediction and Prevention of Stress Migration and Electromigration Damage in Passivated Lines

Published online by Cambridge University Press:  15 February 2011

P. Bergesen ,
M. A. Korhonen  and
C.-Y. Li
P. Bergesen
Affiliation:
Department of Materials Science & EngineeringCornell University, Ithaca, NY 14853
M. A. Korhonen
Affiliation:
Department of Materials Science & EngineeringCornell University, Ithaca, NY 14853
C.-Y. Li
Affiliation:
Department of Materials Science & EngineeringCornell University, Ithaca, NY 14853
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Abstract

Based on recent theoretical progress we discuss current and potential new remedies for thermal stress and electromigration induced damage and failure in microelectronic interconnects. We present a new idea involving the patterning of alternately adhering and non-adhering interfaces between metal and surroundings, and briefly discuss the potential for predicting failure and/or extrapolating accelerated test results to service conditions and into the so-called ‘six-sigma’ range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 27
Copyright
Copyright © Materials Research Society 1992

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References

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