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High-Rate Deposition of Intrinsic a-Si:H and μc-Si:H Layers for Thin‑Film Silicon Solar Cells using a Dynamic Deposition Process

Published online by Cambridge University Press:  10 May 2012

T. Zimmermann ,
A. J. Flikweert ,
T. Merdzhanova ,
J. Woerdenweber ,
A. Gordijn ,
K. Dybek ,
F. Stahr  and
J. W. Bartha
T. Zimmermann
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany Technische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik, Institut für Halbleiter- und Mikrosystemtechnik, D-01062 Dresden, Germany
A. J. Flikweert
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
T. Merdzhanova
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
J. Woerdenweber
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
A. Gordijn
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
K. Dybek
Affiliation:
Von Ardenne Anlagentechnik GmbH, Am Hahnweg 16, D-01328 Weissig, Germany
F. Stahr
Affiliation:
Forschungs- und Applikationslabor Plasmatechnik GmbH, Gostritzer Str. 67, D-01217 Dresden, Germany
J. W. Bartha
Affiliation:
Technische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik, Institut für Halbleiter- und Mikrosystemtechnik, D-01062 Dresden, Germany
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Abstract

Thin‑film silicon solar cells based on hydrogenated amorphous silicon (a‑Si:H) and hydrogenated microcrystalline silicon (μc‑Si:H) absorber layers are typically deposited using static plasma-enhanced chemical vapor deposition (PECVD) processes. It has been found that the use of very‑high frequencies (VHF) is beneficial for the material quality at high deposition rates when compared to radio-frequency (RF) processes. In the present work a dynamic VHF‑PECVD technique using linear plasma sources is developed. The linear plasma sources facilitate the use of very-high excitation frequencies on large electrode areas without compromising on the homogeneity of the deposition process. It is shown that state-of-the-art a‑Si:H and μc‑Si:H single-junction solar cells can be deposited incorporating intrinsic layers grown dynamically by VHF-PECVD at 0.35 nm/s and 0.95 nm/s, respectively.

Keywords

plasma-enhanced CVD (PECVD) (deposition)thin filmSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2012 , 2012 , pp. 27 - 32
Copyright
Copyright © Materials Research Society 2012

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References

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