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Formation of Hydrogen Related Defects and Nano-Voids in Plasma Hydrogenated ZnO

Published online by Cambridge University Press:  01 February 2011

Reinhart Job
Reinhart Job*
Affiliation:
reinhart.job@fernuni-hagen.de, University of Hagen, Mathematics and Computerscience, Universitaetsstr. 27, (EET), Hagen, D-58084, Germany, +4923319871183, +492331987357
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Abstract

Using μ-Raman spectroscopy (μRS) and cathodoluminescence (CL) analyses, the impact of hydrogen plasma treatments on sintered zinc oxide (ZnO) samples was studied. 1 hour H-plasma treatments (150 W, 13.56 MHz) were applied at substrate temperatures between 250 °C and 500 °C. μRS and CL analyses show that plasma hydrogenation causes significant defects in ZnO samples; i) non-specified defect species are established with a maximal density upon H-plasma exposure at 350 °C substrate temperature, and ii) the formation of oxygen vacancies (VO) can be traced. Moreover, μRS reveals vibration modes of H2 molecules trapped in nano-voids. The experimental results indicate that those nano-voids are created by a coalescence of the VO defects.

Keywords

hydrogenationdefectsRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F02-09
Copyright
Copyright © Materials Research Society 2007

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