Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T08:18:34.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Mapping in SiGe by Visible Raman Spectroscopy

Published online by Cambridge University Press:  17 March 2011

Vasil Pajcini
Vasil Pajcini*
Affiliation:
Charles Evans & Associates
Get access

Abstract

Heterogeneous strain in Si/SiGe for CMOS mobility enhancement may result in device yield losses or IC performance limitations. This lateral heterogeneity in strain can be uniquely measured by Raman spectroscopy. UV Raman and Visible Raman can measure this heterogeneity respectively in the thin Si cap and in the SiGe underlayer. Both UV and Visible Raman are useful. While UV Raman is optimized for the Si channel layer, Visible Raman of the SiGe underlayer provides diagnostic information when trying to understand and reduce the heterogeneity in the Si channel. In principle Visible Raman can also measure the heterogeneity of the strain in the Si channel, but in practice this is very time consuming and not as sensitive as UV Raman. This paper focuses on the kind of heterogeneity strain information available from Visible Raman.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B3.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Xie, Q., Liu, R., Wang, X.D., Canonico, M., Duda, E., Lu, S., Cook, C., Volinsky, A. A., Zollner, S., Thomas, S.G., White, T., Barr, A., Sadaka, M and Nguyen, B-Y, “Characterization Techniques for Evaluating Strained Si CMOS Materials,” Characterization and Metrology for ULSI Technology: 2003 International Conference, edited by Seiler, D. G., Diebold, A. C., Shaffner, T. J., McDonald, R., Zollner, S., Khosla, R. P., and Secula, E. M., AIP Conference Proceedings Vol. 683, 2003 American Institute of Physics, Melville, NY, pp. 223–227.Google Scholar
2. Chen, H., Li, Y. K., Peng, C. S., Liu, H. F., Huang, Q., J. Zhou, M. and Xue, Qi-Kun, Phys. Rev. B, 65, 233303 (2002).Google Scholar
3. Savano, K., Koh, S., Shiraki, Y., Usami, N. and Nakagawa, K, Appl. Phys. Lett. 83, 4339 (2003).Google Scholar
4. Tsang, J. C., Mooney, P. A., Dacol, F. and Chu, J. O., Appl. Phys. 75, 8098 (1994).Google Scholar