Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-18T22:51:17.961Z Has data issue: false hasContentIssue false
  • English
  • Français

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

Published online by Cambridge University Press:  01 February 2011

Alex A. Volinsky ,
Grygoriy Kravchenko ,
Patrick Waters ,
Jayadeep Deva Reddy ,
Chris Locke ,
Christopher Frewin  and
Stephen E. Saddow
Alex A. Volinsky
Affiliation:
volinsky@eng.usf.edu, University of South Florida, Mechanical Engineering, 4202 E Fowler Ave. ENB118, Tampa, FL, 33620, United States, 813-974-5658, 813-974-3539
Grygoriy Kravchenko
Affiliation:
krafgr@mail.usf.edu, University of South Florida, Department of Mechanical Engineering, 4202 E. Fowler Ave. ENB118, Tampa, FL, 33620, United States
Patrick Waters
Affiliation:
pwaters@helios.acomp.usf.edu, University of South Florida, Department of Mechanical Engineering, 4202 E. Fowler Ave. ENB118, Tampa, FL, 33620, United States
Jayadeep Deva Reddy
Affiliation:
jdevared@mail.usf.edu, University of South Florida, Department of Mechanical Engineering, 4202 E. Fowler Ave. ENB118, Tampa, FL, 33620, United States
Chris Locke
Affiliation:
clocke@helios.acomp.usf.edu, University of South Florida, Department of Electrical Engineering, 4202 E. Fowler Ave. ENB118, Tampa, FL, 33620, United States
Christopher Frewin
Affiliation:
clfrewin@mail.usf.edu, University of South Florida, Department of Electrical Engineering, 4202 E. Fowler Ave. ENB118, Tampa, FL, 33620, United States
Stephen E. Saddow
Affiliation:
saddow@eng.usf.edu, University of South Florida, Department of Electrical Engineering, 4202 E. Fowler Ave. ENB118, Tampa, FL, 33620, United States
Get access

Abstract

Having superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applications. Growing 3C-SiC films on Si is challenging, as there is a large mismatch in lattice parameter and thermal expansion between the SiC film and the Si substrate that needs to be accommodated, and results in high residual stress. Residual stress control is critical in MEMS devices as upon feature release it results in substantial deformation.

3C-SiC single crystalline films were deposited on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was so high that it fractured on the (111) Si wafer. The resulting film thickness on the (100) Si wafer was non-uniform, having a linear profile along the growth direction. This presented a challenge of using the substrate curvature method for calculating residual stress. Finite Element Method correction was applied to the Stoney's formula for calculating the residual stress along the wafer radius. Suggestions for reducing the amount of residual stress are made.

Keywords

thermal stressesthin filmmicroelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D03-05
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jackson, K.M., Dunning, J., Zorman, C.A., Meheregany, M., Sharpe, W.N., Journal of Microelectromechanical Systems 14 (4), August (2005).Google Scholar
2. Kern, W. and Puotinen, D.A., RCA Rev. 31 187–206 (1970).Google Scholar
3. Reyes, M., Shishkin, Y., Harvey, S., Saddow, S.E., Mat. Res. Soc. Symp. Proc. 911, 79 (2006).Google Scholar
4. Davis, R.F., Kelner, G., Shur, M., Palmour, J.W. and Edmond, J., Proc. IEEE 79 677 (1991).Google Scholar
5. Myers, R.L., Shishkin, Y., Kordina, O., and Saddow, S.E., Journal of Crystal Growth 285 (4) 483–486 (2005).Google Scholar
6. Reddy, J. Deva, Volinsky, A.A., Frewin, C., Locke, C., Saddow, S.E., Mat. Res. Soc. Symp. Proc. 1049 AA3.6 (2008).Google Scholar
7. Stoney, G.G., Proc. Roy. Soc. Lond. A82 72 (1909).Google Scholar
8. Saddow, S.E., Shishkin, Y. and Myers-Ward, R.L., Chapter 3 in Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications, edited by Feenstra, R. M. and Wood, C. E. C., Wiley, New York (2008).Google Scholar
9. Nagasawa, H., Yagi, K., Kawahara, T., Hatta, N., Mater. Sci. Forum 433–436 3–8 (2003).Google Scholar
10. Frewin, C.L., Locke, C., Wang, J., Spagnol, P., and Saddow, S.E., submitted to Appl. Phys. Lett., April (2008).Google Scholar