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Metal Oxide-based (ZnO and IZO) Thin Film Transistors and Circuits

Published online by Cambridge University Press:  01 February 2011

Shahrukh Akbar Khan  and
Miltiadis K. Hatalis
Shahrukh Akbar Khan
Affiliation:
sak406@lehigh.edu, Lehigh University, Electrical Engineering, Bethlehem, Pennsylvania, United States
Miltiadis K. Hatalis
Affiliation:
mkh1@lehigh.edu, Lehigh University, Electrical Engineering, Bethlehem, Pennsylvania, United States
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Abstract

This work emphasizes room temperature deposition and fabrication of staggered bottom-gate ZnO and IZO TFTs. We synthesized these oxide thin films by RF sputtering in an Ar/Oxygen ambience with no intentional heating of the substrates. Bottom gate staggered structure ZnO TFTs were fabricated (Ti/Au/Ti gate and Au/Ti source/drain) and characterized. ZnO TFTs retained well-behaved transfer characteristics down to a channel length of 4 μm with field effect mobility of 5 cm2/V.s, on/off current ratio exceeding 106 and threshold voltage around -5V. The IZO TFTs, with ITO as gate metal layer and highly conducting amorphous IZO forming the source/drain material had reasonably high field effect mobility of 20 cm2/V.s and on/off current ratio exceeding 106, which are well suited for active matrix display applications. Finally, to demonstrate the viability of oxide-based device integration, simple circuits such as inverters and pseudo-logic circuits are designed, fabricated and tested.

Keywords

amorphousthin filmoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1109: Symposium B – Transparent Conductors and Semiconductors for Optoelectronics , 2008 , 1109-B03-38
Copyright
Copyright © Materials Research Society 2009

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References

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