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Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application

Published online by Cambridge University Press:  01 February 2011

Sang-Hyun Lim ,
Alok C Rastogi  and
Seshu B Desu
Sang-Hyun Lim
Affiliation:
sanghyun@engin.umass.edu, University of Massachusetts, Amherst, Electrical and Computer Engineering, 201 Marcus Hall,, Dept. of Electrical and Computer Engineering, Amherst, MA, 01003, United States
Alok C Rastogi
Affiliation:
rastogi@ecs.umass.edu, University of Massachusetts, Electrical and Computer Engineering, Amherst, MA, 01003, United States
Seshu B Desu
Affiliation:
sdesu@ecs.umass.edu, University of Massachusetts, Electrical and Computer Engineering, Amherst, MA, 01003, United States
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Abstract

Metal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.

Keywords

ferroelectricpolymermemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-02
Copyright
Copyright © Materials Research Society 2007

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