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Traps and Defects in Pre- and Post-Aged AlGaN-GaN High Electron Mobility Transistors

Published online by Cambridge University Press:  10 April 2013

Yongkun Sin ,
Brendan Foran ,
Nathan Presser ,
Stephen LaLumondiere ,
William Lotshaw  and
Steven C. Moss
Yongkun Sin
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Brendan Foran
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Nathan Presser
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
William Lotshaw
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Steven C. Moss
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
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Abstract

High electron mobility transistors (HEMTs) based on AlGaN/GaN hetero-structures are promising for both commercial and military applications that require high power, high voltage, and high temperature operation. Reliability and radiation effects of AlGaN-GaN HEMTs need to be thoroughly studied before they are successfully deployed in potential satellite systems. A few AlGaN HEMT manufacturers have recently reported encouraging reliability, but long-term reliability of these devices under high electric field operation and extreme space environments still remains a major concern. A large number of traps and defects are present in the bulk as well as at the surface, leading to undesirable characteristics including current collapse. The present study is part of our investigation to study traps and defects in the AlGaN HEMT devices using micro-analytical techniques before and after they are life-tested.

Keywords

III-Vdevicesdeep level transient spectroscopy (DLTS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1526: Symposium TT – Defects and Microstructure Complexity in Materials , 2013 , mrsf12-1526-tt05-25
Copyright
Copyright © Materials Research Society 2013

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References

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