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Nanometer-scale Pattern Transfer Using Ion Implantation

Published online by Cambridge University Press:  11 February 2011

Naomi Matsuura ,
Todd W. Simpson ,
Chris P. McNorgan ,
Ian V. Mitchell ,
Xiang-Yang Mei ,
Patrick Morales  and
Harry E. Ruda
Naomi Matsuura
Affiliation:
Center for Advanced Nanotechnology, Department of Materials Science and Engineering, University of Toronto, 170 College St., Toronto, Ontario, M5S 3E3, Canada.
Todd W. Simpson
Affiliation:
Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7, Canada.
Chris P. McNorgan
Affiliation:
Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7, Canada.
Ian V. Mitchell
Affiliation:
Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7, Canada.
Xiang-Yang Mei
Affiliation:
Center for Advanced Nanotechnology, Department of Materials Science and Engineering, University of Toronto, 170 College St., Toronto, Ontario, M5S 3E3, Canada.
Patrick Morales
Affiliation:
Center for Advanced Nanotechnology, Department of Materials Science and Engineering, University of Toronto, 170 College St., Toronto, Ontario, M5S 3E3, Canada.
Harry E. Ruda
Affiliation:
Center for Advanced Nanotechnology, Department of Materials Science and Engineering, University of Toronto, 170 College St., Toronto, Ontario, M5S 3E3, Canada.
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Abstract

Conventional, broad-area, ion implantation has been combined with unconventional masking to create 2-D geometrical patterns of amorphization in single crystals, with selectable motifs. The patterns are fully developed by use of selective etching. Two examples are discussed. In the first example, a self-assembled array (with lattice spacing ∼1 μm) of silica spheres is used as an implant mask over InP. The variation of the mask thickness created by the sphere geometry modulates the implantation depth in a periodic fashion, which is subsequently revealed after selective etching of the associated amorphized volumes. In the second example, nanochannel arrays in an alumina film are used as an implant mask to produce a hexagonal closed packed array of amorphized cylinders in InP and SrTiO3 substrates. The ion beam-amorphized regions of the substrate are then removed by selective chemical etching to achieve the full 3-D patterning of 55 nm diameter holes on a 100 nm lattice spacing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 739: Symposium H – Three-Dimensional Nanoengineered Assemblies , 2002 , H8.3
Copyright
Copyright © Materials Research Society 2003

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References

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