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Impact of EBAS annealing on sheet resistance reduction for Al-implanted 4H-SiC(0001)

Published online by Cambridge University Press:  01 February 2011

Masami Shibagaki ,
Akihiro Egami ,
Akira Kumagai ,
Kenji Numajiri ,
Fumio Watanabe ,
Shigetaka Haga ,
Kuniaki Miura ,
Shingo Miyagawa ,
Naohiro Kudoh  and
Tomoyuki Suzuki
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Masami Shibagaki
Affiliation:
sibagakim@mha.anelva.jp, Canon ANELVA Corporation, Advanced Technology Dept, 5-8-1 Yotsuya, Fuchu, Tokyo, N/A, 183-8508, Japan, 81-42-334-0240, 81-42-334-0962
Akihiro Egami
Affiliation:
egami.akihiro@canon-anelva.co.jp, Canon ANELVA Corporation, Advanced Technology Dept, 5-8-1 Yotsuya, Fuchu, Tokyo, N/A, 183-8508, Japan
Akira Kumagai
Affiliation:
kumagai.akira@canon-anelva.co.jp, Canon ANELVA Corporation, Advanced Technology Dept, 5-8-1 Yotsuya, Fuchu, Tokyo, N/A, 183-8508, Japan
Kenji Numajiri
Affiliation:
numajiri.kenji@canon-anelva.co.jp, Canon ANELVA Corporation, Advanced Technology Dept, 5-8-1 Yotsuya, Fuchu, Tokyo, N/A, 183-8508, Japan
Fumio Watanabe
Affiliation:
watanabe@vaclab.co.jp, Sukegawa Electric, 3333 Kami-tezuna, Takahagi, Ibaraki, 318-0004, Japan
Shigetaka Haga
Affiliation:
haga@net-sukegawa.com, Sukegawa Electric, 3333 Kami-tezuna, Takahagi, Ibaraki, 318-0004, Japan
Kuniaki Miura
Affiliation:
miura@net-sukegawa.com, Sukegawa Electric, 3333 Kami-tezuna, Takahagi, Ibaraki, 318-0004, Japan
Shingo Miyagawa
Affiliation:
i05r3243@k.hosei.ac.jp, Hosei University, Research Center of Ion Beam Technology, 3-7-2 Kajino-cho, Koganei, Tokyo, 184-8584, Japan
Naohiro Kudoh
Affiliation:
i06r3108@k.hosei.ac.jp, Hosei University, Research Center of Ion Beam Technology, 3-7-2 Kajino-cho, Koganei, Tokyo, 184-8584, Japan
Tomoyuki Suzuki
Affiliation:
c00d3070@k.hosei.ac.jp, Hosei University, Research Center of Ion Beam Technology, 3-7-2 Kajino-cho, Koganei, Tokyo, 184-8584, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, Hosei University, Research Center of Ion Beam Technology, 3-7-2 Kajino-cho, Koganei, Tokyo, 184-8584, Japan
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Abstract

In this paper, we demonstrate that high temperature and short time EBAS annealing is effective to obtain low sheet resistance without surface roughening in heavily Al-implanted 4H-SiC (0001) samples (Al concentration: 1.0 × 1021 /cm3, thickness: 0.3 microns, total dose: 2.6 × 1016 /cm2). The sheet resistance and rms surface roughness of the sample annealed at 1800 °C for 0.5 min is estimated to be 4.8k ohm/sq. and 0.82 nm, respectively. Also, we discuss the advantage of EBAS annealing for the suppression of surface roughening during annealing.

Keywords

annealingelectrical propertiesmorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B11-02
Copyright
Copyright © Materials Research Society 2006

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References

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