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The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties

Published online by Cambridge University Press:  18 March 2015

Yoko Takada ,
Naoki Okamoto ,
Takeyasu Saito ,
Kazuo Kondo ,
Takeshi Yoshimura ,
Norifumi Fujimura ,
Koji Higuchi ,
Akira Kitajima  and
Hideo Iwai
Yoko Takada
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Naoki Okamoto
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Takeyasu Saito
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Kazuo Kondo
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Takeshi Yoshimura
Affiliation:
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
Norifumi Fujimura
Affiliation:
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
Koji Higuchi
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki 567-0047, Japan
Akira Kitajima
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki 567-0047, Japan
Hideo Iwai
Affiliation:
Materials Analysis Station, National Institute for Materials Science, Tsukuba 305-0047, Japan
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Abstract

We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) top electrodes using chemical solution deposition. Then, the effects of a thin conductive ITO buffer layer between the Pt bottom electrode and PLZT thin film were investigated in combination with top electrode (ITO/PLZT/ITO/Pt). The H2 degradation resistance of ITO/PLZT/ITO/Pt capacitors with a 3- and 28-nm-thick buffer layer was improved to 78 and 85%, respectively, from 60% without a buffer layer. The time-of-flight secondary ion mass spectrometry profiles indicated the intensity of H ion increased after 45 min forming gas (3% H2/balance N2) annealing.

Keywords

ferroelectricityoxidesecondary ion mass spectroscopy (SIMS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 93 - 98
Copyright
Copyright © Materials Research Society 2015 

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