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Use of a Native Oxide of AlxGa1−xAs in the Fabrication of Integrated Laser/Modulators

Published online by Cambridge University Press:  22 February 2011

R.S. Burton  and
T.E. Schlesinger
R.S. Burton
Affiliation:
Integrated Microsystems Laboratory Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
T.E. Schlesinger
Affiliation:
Integrated Microsystems Laboratory Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

A planar self-aligned process for fabricating integrated lasers and modulators is described. This process employs a native oxide of AlxGa1−xAs to form the waveguide structure and dielectric passivation layer. Wet oxidation of AlxGa1−xAs is being investigated to determine possible processing parameters that result in good quality oxides and a reliable fabrication process. Variations in the mechanical properties were observed with changes in processing parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 127
Copyright
Copyright © Materials Research Society 1993

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References

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