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Effects of Hydrogen on the Internal Time Scales in Zr-Ti-Ni-Cu-Be Bulk Metallic Glasses

Published online by Cambridge University Press:  17 March 2011

Daewoong Suh  and
Reinhold H. Dauskardt
Daewoong Suh
Affiliation:
Department of Materials Science and EngineeringStanford University, Stanford, CA 94305-2205
Reinhold H. Dauskardt
Affiliation:
Department of Materials Science and EngineeringStanford University, Stanford, CA 94305-2205
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Abstract

The effects of pre-charged hydrogen on various kinetic processes in a Zr-Ti-Ni-Cu-Be bulk metallic glass alloy were investigated. Hydrogen charging induced longer internal time scales for structural relaxation and viscous flow. Crystallization was retarded by hydrogen charging leading to enhanced glass stability. Positron annihilation spectroscopy indicated reduced average free volume size after hydrogen charging. The reduced free volume and higher viscosity caused by hydrogen retard the plastic deformation and are believed to be responsible for hydrogen embrittlement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 644: Symposium L – Supercooled Liquid, Bulk Glassy and Nanocrystalline State of Alloys , 2000 , L10.3
Copyright
Copyright © Materials Research Society 2001

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References

1.Johnson, W.L., MRS Bulletin, Oct, 42 (1999).Google Scholar
2.Oriani, R.A., Corrosion 43, 390 (1987).Google Scholar
3.Flis, J., Ashok, S., Stoloff, N.S. and Duquette, D.J., Acta metall. 35, 2071 (1987).Google Scholar
4.Suh, D. and Dauskardt, R.H., Scripta mater. 42, 233 (2000).Google Scholar
5.Stoeffl, W., Asoka-Kumar, P. and Howell, R., Appl. Surf. Sci. 149, 1 (1999).Google Scholar
6.Kraus-Rehberg, R. and Leipner, H.S., Positron Annihilation in Semiconductors, Springer, Berlin (1990).Google Scholar
7.Moynihan, C.T., in Assignment of the Glass Transition, edited by Seyler, R.J. (ASTM STP 1249), American Society for Testing and Materials, Philadelphia, p.32 (1994).Google Scholar
8.Crest, G.S. and Cohen, M.H., Phys. Rev. B 21, 4113 (1980).Google Scholar
9.Crest, G.S. and Cohen, M.H., J. Non-Crystal. Solids 61–62, 749 (1984).Google Scholar
10.Spaepen, F., in Physics of Defects, edited by Balian, R., Kleman, M. and Poirier, J.-P. (Les Houches Lectures XXXV), Notrh-Holland, Amsterdam, p.133 (1981).Google Scholar
11.Masuhr, A., Waniuk, T.A., Busch, R. and Johnson, W.L., Phys. Rev. Lett. 82, 2290 (1999).Google Scholar
12.Geyer, U., Johnson, W.L., Schneider, S., Qiu, Y., Tombrello, T.A. and Macht, M.-P., Appl. Phys. Lett. 69, 2492 (1996).Google Scholar
13.Sapepen, F., Acta metall. 25, 407 (1977).Google Scholar
14.Argon, A.S., Acta metall. 27, 47 (1979).Google Scholar
15.Falk, M.L. and Langer, J.S., Phys. Rev. E. 57, 7192 (1998).Google Scholar
16.Srolovitz, D., Vitek, V. and Egami, T., Phil. Mag. A 44, 847 (1981).Google Scholar
17.Steif, P.S., Saepen, F. and Hutchinson, J.W., Acta metall. 30, 447 (1982).Google Scholar