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The Effect of Grain Boundaries and Substrate Interactions with Hydrogen on the CVD Growth of Device-Quality Copper.

Published online by Cambridge University Press:  15 February 2011

A. E. Kaloyeros ,
C. Dettelbacher ,
E. T. Eisenbraun ,
W. A. Lanford ,
H. Li ,
J. F. Olowolafe ,
S. Murarka ,
F. Pintchovski ,
Y. -T. Shy  and
P. J. Toscano
A. E. Kaloyeros
Affiliation:
Physics Department, The University at Albany-SUNY, Albany, NY 12222
C. Dettelbacher
Affiliation:
Chemistry Department, The University at Albany-SUNY, Albany, NY 12222
E. T. Eisenbraun
Affiliation:
Physics Department, The University at Albany-SUNY, Albany, NY 12222
W. A. Lanford
Affiliation:
Physics Department, The University at Albany-SUNY, Albany, NY 12222
H. Li
Affiliation:
Physics Department, The University at Albany-SUNY, Albany, NY 12222
J. F. Olowolafe
Affiliation:
Advanced Products Research and Development Laboratory, MOS Memory Products Group, Motorola, Austin, TX 78762
S. Murarka
Affiliation:
Center for Integrated Electronics and Materials Engineering Department, Rensselaer Polytechnic Institute, RPI, Troy, NY 12180
F. Pintchovski
Affiliation:
Advanced Products Research and Development Laboratory, MOS Memory Products Group, Motorola, Austin, TX 78762
Y. -T. Shy
Affiliation:
Center for Integrated Electronics and Materials Engineering Department, Rensselaer Polytechnic Institute, RPI, Troy, NY 12180
P. J. Toscano
Affiliation:
Chemistry Department, The University at Albany-SUNY, Albany, NY 12222
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Abstract

The effects of grain boundaries and substrate interactions with hydrogen on the CVD growth of device-quality copper were investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS), Auger electron spectroscopy (AES), four-point resistivity probe, x-ray diffraction (XRD), and hydrogen profiling techniques. The films were deposited at 200° C in a stainless-steel cold-wall-type CVD reactor in an atmosphere of pure H2 from various β-diketonate precursors, including bis(6,6,7,7,8,8,8-heptafluoro-2,2- dimethyl-3,5-octanediono)copper(II), Cu(fod)2, and bis(2,2,6,6-tetramethyl- 3,5-heptanedionato)copper(II), Cu(tmhd)2. The results of these studies showed that films grown on in-situ plasma-cleaned metallic substrates were uniform, continuous, adherent, and highly pure. Films with grain size larger than 500Å exhibited very low resistivity, as low as 1.7 μΩcm. Preliminary investigations of the mechanisms of selective copper CVD showed that selectivity is independent of precursor chemistry and is a function of the nature and degree of substrate interactions with hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 229: Symposium Q – Structure/Property Relationships for Metal/Metal Interfaces , 1991 , 123
Copyright
Copyright © Materials Research Society 1991

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