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Intermediate Layers for Thin-Film Polycrystalline Silicon Solar Cells on Glass Formed by Diode Laser Crystallization

Published online by Cambridge University Press:  18 May 2012

Jonathon Dore ,
Rhett Evans ,
Bonne D. Eggleston ,
Sergey Varlamov  and
Martin A. Green
Jonathon Dore
Affiliation:
University of New South Wales, Kensington, NSW, 2051Australia. Suntech R&D Australia Pty Ltd, 82 Bay St, Botany, NSW, 2019Australia.
Rhett Evans
Affiliation:
Suntech R&D Australia Pty Ltd, 82 Bay St, Botany, NSW, 2019Australia.
Bonne D. Eggleston
Affiliation:
University of New South Wales, Kensington, NSW, 2051Australia. Suntech R&D Australia Pty Ltd, 82 Bay St, Botany, NSW, 2019Australia.
Sergey Varlamov
Affiliation:
University of New South Wales, Kensington, NSW, 2051Australia.
Martin A. Green
Affiliation:
University of New South Wales, Kensington, NSW, 2051Australia.
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Abstract

Intermediate layers between silicon and borosilicate glass are investigated for compatibility with a diode laser crystallization technique for fabrication of thin-film polycrystalline silicon solar cells. SiCx, SiNx and SiOx layers or multilayer stacks of these materials have allowed silicon films of 10μm thickness to be successfully crystallized by diode laser irradiation without dewetting, with each option offering different advantages. SiCx allows the most robust crystallization process, while SiOx is the best barrier to contamination and the most stable layer. SiNx offers the best anti-reflection coating for superstrate configured solar cells. Presently, best device performance is achieved with a SiOxintermediate layer with cells achieving up to ∼540 mV open-circuit voltage.

Keywords

thin filmlaserphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 63 - 68
Copyright
Copyright © Materials Research Society 2012

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