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Mapping of Two Dimensional Doping Areas in CMOS Device by Using Transport of Intensity Equation

Published online by Cambridge University Press:  01 August 2005

W-K Hsieh
Affiliation:
National Tsing-Hua University, Taiwan
F-R Chen
Affiliation:
National Tsing-Hua University, Taiwan
Y-M Chen
Affiliation:
National Tsing-Hua University, Taiwan
H-W Hsu
Affiliation:
National Tsing-Hua University, Taiwan
J-J Kai
Affiliation:
National Tsing-Hua University, Taiwan

Extract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

Type
Research Article
Copyright
© 2005 Microscopy Society of America