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Initial Studies on The Heteroepitaxial Growth of Thin Films of (AI/In)N on Ain-Seeded (00.1) Sapphire by Single-Target Reactive Magnetron Sputtering

Published online by Cambridge University Press:  25 February 2011

T. J. Kistenmacher ,
S. A. Ecelberger  and
W. A. Bryden
T. J. Kistenmacher
Affiliation:
Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
S. A. Ecelberger
Affiliation:
Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
W. A. Bryden
Affiliation:
Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
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Abstract

Thin films of (AI/In)N alloys have been deposited on AIN-nucleated (00.1) sapphire by reactive (pure N2 gas) magnetron sputtering and characterized by X-ray scattering, stylus profilometry, optical spectroscopy, and electrical transport measurements. Initial efforts have concentrated on producing films with compositions near Al0.31In0.69N (bandgap tailored to GaN). The alloy sputtering targets were disks fabricated by cold pressing appropriate molar mixtures of beads of 99.99% purity Al and In. The resulting thin films are composed of heteroepitaxial grains {(00.1)InNll(00.1)sapphire; (10.0)InNll(11.0)Sapphire} and their chemical composition has been deduced from the variation in the a cell constant (as measured by the X-ray precession method) to yield equilibrium film compositions near Al0.04In0.96N and Al0.25In0.75N, respectively. Preliminary results are presented on the dependence of the quality of heteroepitaxial growth and electrical and optical properties of. these AlxIn1−xN alloy films on various growth parameters: such as chemical composition; film thickness; morphology; and substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 95
Copyright
Copyright © Materials Research Society 1992

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References

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