Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-24T23:14:20.367Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of nano-AgI arrays and their optical properties

Published online by Cambridge University Press:  31 January 2011

Yinhai Wang ,
Jimei Mo ,
Weili Cai ,
Lianzeng Yao  and
Lide Zhang
Yinhai Wang
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
Jimei Mo*
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
Weili Cai
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
Lianzeng Yao
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
Lide Zhang
Affiliation:
Institute of Solid State Physics, Chinese Academy of Science, Hefei 230031, People's Republic of China
*
a)Address all correspondence to this author.mjmm@ustc.edu.cn
Get access

Abstract

Nano-AgI arrays were synthesized by electrochemical double liquor deposition in ordered porous alumina membrane. On the basis of the analysis of x-ray diffraction patterns, the assembly of nano-AgI/Al2O3 is a mixture of a cubic zinc blende type γ–AgI and a hexagonal wurtzite type β–AgI. The visible–ultraviolet optical absorption measuring showed that the assembly only had an absorption edge at 2.82 eV and exhibited the optical features of a semiconductor with a direct band gap. The absorption edge of the assembly was shifted to a shorter wavelength compared with pure γ–AgI and a longer wavelength compared with pure β–AgI. We believed that the change of the absorption edge of the assembly is due to the mixture of γ–AgI and β–AgI.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 4 , April 2001 , pp. 990 - 992
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Martin, C.R., Science 266, 1961 (1994).CrossRefGoogle Scholar
2.Li, Y., Meng, G.W., Zhang, L.D., and Phillipp, F., Appl. Phys. Lett. 76, 2012 (2000).Google Scholar
3.Nagai, M. and Nishino, T., J. Electrochem. Soc. 138, L49 (1991).CrossRefGoogle Scholar
4.Du, Y., Cai, W.L., Mo, C.M., Chen, J., Zhang, L.D., and Zhu, X.G., Appl. Phys. Lett. 74, 2951 (1999).CrossRefGoogle Scholar
5.Nagai, M. and Nishino, T., Solid State Ionics 53–56, 63 (1992).CrossRefGoogle Scholar
6.El-Hady, S.A.A., Mansour, B.A., and Moustafa, S.H., Phys. Status Solidi A 149, 601 (1995).CrossRefGoogle Scholar
7.Ves, S., Glotzel, D., Cardons, M., and Overhof, H., Phys. Rev. B 24, 3073 (1981).CrossRefGoogle Scholar
8.Kumar, P.S., Dayal, P.B., and Sunandana, C.S., Thin Solid Films 357, 111 (1999).CrossRefGoogle Scholar
9.Cardona, M., Phys. Rev. 120, 69 (1963).CrossRefGoogle Scholar
10.Chen, G., Zhang, X., Wang, B., Song, X., Cui, B., and Yan, H., Appl. Phys. Lett. 75, 10 (1999).CrossRefGoogle Scholar