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Activation of Beryllium-Implanted GaN by Two-Step Annealing

Published online by Cambridge University Press:  03 September 2012

Yuejun Sun ,
Leng Seow Tan ,
Soo Jin Chua  and
Savarimuthu Prakash
Yuejun Sun
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Leng Seow Tan
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Soo Jin Chua
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Savarimuthu Prakash
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
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Abstract

For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm−2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of ∼ 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.82
Copyright
Copyright © Materials Research Society 1999

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References

1. Strite, S. and Morkoc, H., J. Vac. Sci. Tech. B, 10, 1237 (1992)Google Scholar
2 Akasaki, I., Amano, H., Kito, M. and Hiramatsu, K., J. Lumin., 48/49, 666 (1991)Google Scholar
3. Orton, J. W., Semicond. Sci. Tech., 10, 101 (1995)Google Scholar
4. Strite, S., Jpn. J. Appl. Phys., 33, 699 (1994)Google Scholar
5. Bernardini, F., Fiorentini, V., and Bosin, A., Appl. Phys. Lett., 70, 2990 (1997)Google Scholar
6. Dewsnip, D. J., Andrianov, A. V., Harrison, I., Orton, J. W., Lacklison, D.E., Ren, G. B., Hopper, S.E., Cheng, T. S., and Foxon, C. T., Semicond. Sci. Tech., 13, 500 (1998)Google Scholar
7. Sanchez, F. J., Calle, F., Sanchez-Garcia, M. A., Calleja, E., Munoz, E., Molly, C. H., Somerford, D. J., Koschnick, F. K., Michael, K., and Spaeth, J. M., MRS Internet J. of Nitride Semicon. Research, V3, Article 19 (1998)Google Scholar
8. Ronning, C., Carlson, E. P., Thomson, D. B., and Davis, R. F., Appl. Phys. Lett., 73, 1622 (1998)Google Scholar
9. Salvador, A., Kim, W., Aktas, O., Botchkarev, A., Fan, Z., and Morkoc, H., Appl. Phys. Lett., 69, 2692 (1996)Google Scholar
10. Neugebauer, J. and Walle, C. G. Van De, Appl. Phys. Lett., 85, 3003 (1999)Google Scholar
11. Brandt, O., Yang, H., Kostial, H., and Ploog, K. H., Appl. Phys. Lett., 69, 2707 (1996)Google Scholar
12 Gotz, W., Johnson, N. M., Chen, C., Liu, H., C. Kuo and Imler, W., Appl. Phys. Lett., 68, 3144 (1996)Google Scholar
13 Zolper, J.C., Wilson, R. G., Pearton, S. J. and Stall, R. A., Appl. Phys. Lett., 68, 1945(1996).Google Scholar
14 Eckey, L., Gfug, U. von, Holst, J., Hoffmann, A., Kaschner, A., siegle, H., Thomsen, C., Schineller, B., Heime, K., Heuken, M., Schon, O. and Beccard, R., J. Appl. Phys., 84, 5828 (1998)Google Scholar
15 Zolper, J. C., in : GaN and Related Materials, Ed. Pearton, S. J. (Gordon and Breach, New York, 1997) ch.12Google Scholar
16 Wilson, R. G., Zavada, J. M., Cao, X.A., Singh, R.K., Pearton, S. J., Guo, H. J., Pennycook, S. J., Fu, M., Sekhar, J.A., Scarvepalli, V., Shul, R. J., Han, J., Rieger, D. J., Zolper, J. C. and Abernathy, C. R., J. Vac. Sci. Technol., A 17, 1226 (1999).Google Scholar
17 Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T. and Davis, R. F., MRS Internet J. Nitride Semicond. Res., 4S1, G3.17 (1999)Google Scholar
18 Pearton, S. J., Wilson, R. G., Zavada, J. M., Han, J. and Shul, R. J., Appl. Phys. Lett., 73, 1877 (1998)Google Scholar
19 Suski, T., Jun, J., Leszczynski, M., Teisseyre, H., Strite, S., Rockett, A., Pelzmann, A., Kamp, M. and Ebeling, K. J., J. Appl. Phys., 84, 1155 (1998)Google Scholar
20 Reboredo, F. A. and Pantelides, S. T., Phys. Rev. Lett., 82, 1887 (1999)Google Scholar