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Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth

Published online by Cambridge University Press:  31 January 2011

Min Hong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Tae-Soon Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dong-Su Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Euijoon Yoon*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dong-Yeon Park
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Hyun-Jung Woo
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Dong-Il Chun
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Jowoong Ha
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
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Abstract

Highly (200)-oriented Pt films on SiO2/Si substrates were successfully prepared by a combination of a dc magnetron sputtering using Ar/O2 gas mixtures and subsequent controlled annealing. The intensity ratio of (200) to (111) planes (I200/I111) was over 200. The (200)-oriented Pt microcrystallites were less susceptible to amorphization due to their lower strain energy with oxygen incorporation than (111)-oriented ones. The controlled grain growth from the selected (200)-oriented seed microcrystallites during subsequent annealing provided a kinetic pathway where grain growth of the seed microcrystallites was predominant, while suppressing the nucleation of surface energy-driven, (111)-oriented seed microcrystallites and subsequent (111) preferred orientation.

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Articles
Copyright
Copyright © Materials Research Society 1999

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