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Grain Growth in Titanium Silicide Films During the Formation Reaction

Published online by Cambridge University Press:  25 February 2011

Yunji L. Corcoran ,
Alexander H. King ,
Nimal deLanerolle ,
Bonggi Kim  and
John Berg
Yunji L. Corcoran
Affiliation:
Department of Materials Science, State University of New York at Stony Brook, Stony Brook, NY 11794–2275.
Alexander H. King
Affiliation:
Department of Materials Science, State University of New York at Stony Brook, Stony Brook, NY 11794–2275.
Nimal deLanerolle
Affiliation:
Standard Microsystem Co. Hauppauge, NY 11788.
Bonggi Kim
Affiliation:
Standard Microsystem Co. Hauppauge, NY 11788.
John Berg
Affiliation:
Standard Microsystem Co. Hauppauge, NY 11788.
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Abstract

Titanium films of 0.5 µm thickness were sputter deposited on silicon substrates. After rapid thermal annealing at temperatures ranging from 600°C to 850°C for times up to 45 seconds in nitrogen, transmission electron microscope (TEM) cross section specimens were made from the wafers. Grain sizes of the resulting titanium disilicide were measured from TEM cross section micrographs. The results show that C49-TiSi2 has a different grain growth rate than C54-TiSi2- Under our experimental conditions, C54-TiSi2 has a much higher growth rate. Titanium silicide on arsenic implanted silicon substrates shows a lower grain growth rate than that on unimplanted substrates under the same conditions. The thickness of the silicide layer was also measured for each specimen. The relationship of thickness and grain size will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 137
Copyright
Copyright © Materials Research Society 1991

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References

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