Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-19T19:16:37.458Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Thin Metal Films Deposited at Low Temperature

Published online by Cambridge University Press:  15 February 2011

L. He ,
E. Li ,
E. Morrison ,
D. Sirur  and
Z. Q. Shi
L. He
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
E. Li
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
E. Morrison
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
D. Sirur
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
Z. Q. Shi
Affiliation:
NEOCERA, Inc., College Park, MD
Get access

Abstract

Thin metal layers play an important role in the development of electronic devices. The thin metal films deposited at low temperature (LT=77K) showed some unique properties which enhanced device performance. The micro-structural properties of thin metal films formed at room temperature (RT) and LT were investigated. An insulating substrate was used for Au, Pd Al and Ag metal deposition. The metal films were deposited by vacuum evaporation with thickness ranged from 100 Å to 100 Å. The surface morphology of the metal films was determined by transmission electron spectroscopy (TEM). The resistance of the films was insitu measured as a function of film thickness and temperature. Electrical measurement found that these films shown several orders lower resistance compared to the film obtained at room temperature at very thin thickness, which, implies potential application of these films on electronic and optoelectronic devices. It is found that the LT films showed much lower densities of grain boundaries than the RT samples. This is consistent with the resistivity measurement results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 455
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sze, S. M., SEMICONDUCTOR DEVICES: Physics and Technology, John Wiley & Sons, 1985, pp. 287–298 Google Scholar
2. , Maissel & , Glang, HANDBOOK OF THIN FILM TECHNOLOGY. McGraw Hill, 1983, pp.13-1 to pp.13–8.Google Scholar
3. Shi, Z. Q. and Anderson, W. A., J. Appl. Phys.. 72, 3803 (1993)Google Scholar
4. He, L., Shi, Z. Q. and Anderson, W. A., J. Electron. Mat., 23, 1285 (1994)Google Scholar
5. Rhodin, T. and Walton, D., SINGLE CRYSTAL FILMS, Pergamon Press, New York, 1964, p. 31 Google Scholar