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Growth and Characterization of CDTE and CDTE Alloys

Published online by Cambridge University Press:  21 February 2011

S. Mcdevitt ,
D.R. John ,
J.L. Sepich ,
K.A. Bowers ,
J.F. Schetzina ,
R.S. Rai  and
S. Mahajan
S. Mcdevitt
Affiliation:
II-VI Incorporated, 375 Saxonburg Boulevard, Saxonburg, PA 16056
D.R. John
Affiliation:
II-VI Incorporated, 375 Saxonburg Boulevard, Saxonburg, PA 16056
J.L. Sepich
Affiliation:
II-VI Incorporated, 375 Saxonburg Boulevard, Saxonburg, PA 16056
K.A. Bowers
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695
J.F. Schetzina
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695
R.S. Rai
Affiliation:
Carnegie Mellon University, Department of Metallurgical Engineering and Materials Science, Pittsburgh, PA 15023
S. Mahajan
Affiliation:
Carnegie Mellon University, Department of Metallurgical Engineering and Materials Science, Pittsburgh, PA 15023
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Abstract

Methods used to grow bulk, CdTe crystals, effects of alloying on their perfection and typical single crystal properties are reviewed in this paper. Crystals grown by a modified horizontal Bridgman technique have lower dislocation densities than those grown by a modified vertical Bridgman method. Dislocation densities of the order of 1×103/cm2 have been observed in CdTeSe crystals grown by the former technique. Due to the difference in the distribution coefficients of Zn and Se in CdTe, CdTeSe ingots are chemically more uniform than CdZnTe ingots. Purity studies of starting materials indicate that Se substitutions may introduce more impurities than Zn additions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 15
Copyright
Copyright © Materials Research Society 1990

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References

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